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(a) SEM micrograph of an 800 nm wide nanowire with electrical leads. (b) MFM image of a vortex domain wall formed at the center of the semi-circular nanowire.
(a) Resistance of the nanowire under ac-impedance measurements across P1P2. (b) Capacitance across P1P2. (c) Magnetoresistance and magnetocapacitance ratio for various widths of nanowires. (d) R-X plot for the frequency range 50 Hz–2 MHz. The absolute X component is plotted with a circular fit.
(a) Equivalent circuit for the measurement set up with two leaky capacitors representing the nanowire and the rest corresponding to the other effects arising from the coaxial line and contacts. (b) Simplified equivalent circuit with the field dependent components (C M and R M) and others (Z T). (c) R component of IS at two different magnetic fields. (d) X component of IS. The insets in (c) and (d) show ΔR and ΔX, respectively, with fits.
(a) VSM measurements on a Co/Pd multilayer thin film. (b) Anomalous Hall effect measurement. The inset shows a measurement schematic. (c) R-H response of the nanowire across B1C1. (d) C-H measurements across B1C1.
Fitting parameters from the ΔR and ΔX.
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