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(a) Schematic picture of the studied structures along with an STEM image displaying a close-up of the CdSe QD layer. The bright and dark areas correspond to Cd-and Zn-rich regions, respectively. (c)-(e) Profile of Mn and Cd content across the structure with the 2 nm wide ZnSe barrier. (b) Schematic drawing of the structure aligned with (c)-(e).
(a)-(b) Representative PL and PL polarization spectra obtained at 0, 2.5, and 5 T, under excitation by linearly polarized light at 2.88 eV (430 nm). The PL peak positions of the σ+ active DMS excitonic emission are indicated by the arrows. (c)-(d) PLE and PL polarization spectra obtained at 0, 2.5, and 5 T by monitoring the QD PL emission at the 2.605 eV (i.e., QD’s PL peak position). The PL and PLE peaks related to the σ+ active DMS exciton state are indicated by the arrows in (a) and (c). All data were obtained at 2 K from the sample with LB = 10 nm, as an example.
(a) Typical decay curves of the PL intensity detected at the DMS and QD PL peak. For the QDs, decays at two different excitation energies are displayed, i.e., at 460 nm for the quasi-resonant excitation and at 448 nm for the DMS excitation. (b) Transient circular polarization degree of the QD PL under the two different excitation conditions. All data were obtained at 2 K from the sample with LB = 10 nm.
PLE and PL polarization spectra obtained at 2 K and 5 T from the structures with barrier thickness LB of (a) 10 nm, (b) 5 nm, and (c) 2 nm. Excitation source was linearly polarized and detection window was set at the QD PL peak position for all curves.
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