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P-type conductive amorphous oxides of transition metals from solution processing
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10.1063/1.4739936
/content/aip/journal/apl/101/5/10.1063/1.4739936
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/5/10.1063/1.4739936

Figures

Image of FIG. 1.
FIG. 1.

Phase and morphology analyses for solution-processed a-La-Ru-O films. (a) XRD patterns for films annealed at different temperatures. (b)–(d) TEM and ED images (annealed at 650 °C). (e) AFM image of the film surface (annealed at 500 °C). (f) AFM image of an imprinted film (annealed at 550 °C).

Image of FIG. 2.
FIG. 2.

(a) Room temperature DC resistivity against processing temperatures. La-Ru-O was spin coated 3 layers (3lys) or 1 layer (1ly), and La-Ir-O was spin coated 3 layers. The inset is for samples sputtered at different substrate temperatures. (b) Temperature dependence of resistivity. The inset shows fitting of the data to the three-dimensional variable-range hopping model. (c) Seebeck coefficient against measurement temperature. (d) XPS and UPS spectra for the valence band.

Image of FIG. 3.
FIG. 3.

(a) XRD patterns (annealed at 650 °C) and (b) room temperature DC resistivity for solution-processed Ln-Ru-O films.

Tables

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Table I.

Variation of RT DC resistivity (Ω cm) during alternate annealing (10 min for each) in oxygen flow (0.1 MPa) and vacuum (2.0–2.5 Pa) at the indicated temperatures.

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/content/aip/journal/apl/101/5/10.1063/1.4739936
2012-07-30
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: P-type conductive amorphous oxides of transition metals from solution processing
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/5/10.1063/1.4739936
10.1063/1.4739936
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