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Phase and morphology analyses for solution-processed a-La-Ru-O films. (a) XRD patterns for films annealed at different temperatures. (b)–(d) TEM and ED images (annealed at 650 °C). (e) AFM image of the film surface (annealed at 500 °C). (f) AFM image of an imprinted film (annealed at 550 °C).
(a) Room temperature DC resistivity against processing temperatures. La-Ru-O was spin coated 3 layers (3lys) or 1 layer (1ly), and La-Ir-O was spin coated 3 layers. The inset is for samples sputtered at different substrate temperatures. (b) Temperature dependence of resistivity. The inset shows fitting of the data to the three-dimensional variable-range hopping model. (c) Seebeck coefficient against measurement temperature. (d) XPS and UPS spectra for the valence band.
(a) XRD patterns (annealed at 650 °C) and (b) room temperature DC resistivity for solution-processed Ln-Ru-O films.
Variation of RT DC resistivity (Ω cm) during alternate annealing (10 min for each) in oxygen flow (0.1 MPa) and vacuum (2.0–2.5 Pa) at the indicated temperatures.
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