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Effects of Ga on the growth of InN on O-face ZnO by plasma-assisted molecular beam epitaxy
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10.1063/1.4739941
/content/aip/journal/apl/101/5/10.1063/1.4739941
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/5/10.1063/1.4739941
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

RHEED patterns of (a)–(c) InN and (d)–(f) films grown at three different . The RHEED patterns were taken along the azimuth after growth.

Image of FIG. 2.
FIG. 2.

FWHM of (a) 0002 and (b) XRD scans for the InN and films grown at different growth temperatures . The lines are guides to the eye.

Image of FIG. 3.
FIG. 3.

Two-beam dark-field cross-sectional TEM images of an InN film grown at [(a) and (d)], of an film grown at [(b) and (e)], and of an film grown at [(c) and (f)] near the zone axis with g = 0002 [(a)–(c)] and [(d)–(f)]. The arrows in (c) indicate some of the inversion domain boundaries.

Image of FIG. 4.
FIG. 4.

Atomically resolved lattice image taken in a thin sample area of the film grown at . Two domains with opposite polarities are clearly seen. The dashed rectangle indicates the region of an inversion domain boundary.

Image of FIG. 5.
FIG. 5.

High-resolution TEM image of the interface between the film grown at and an O-polar ZnO substrate. The arrow indicates an inversion domain boundary. The triangles highlight the interface between and ZnO.

Image of FIG. 6.
FIG. 6.

High-resolution TEM image of the interface between an film grown at and O-polar ZnO substrate. Misfit dislocations at the are indicated by arrows. A 60° a-type misfit dislocation is clearly seen in the magnified inset.

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/content/aip/journal/apl/101/5/10.1063/1.4739941
2012-07-30
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of Ga on the growth of InN on O-face ZnO(0001¯) by plasma-assisted molecular beam epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/5/10.1063/1.4739941
10.1063/1.4739941
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