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RHEED patterns of (a)–(c) InN and (d)–(f) films grown at three different . The RHEED patterns were taken along the azimuth after growth.
FWHM of (a) 0002 and (b) XRD scans for the InN and films grown at different growth temperatures . The lines are guides to the eye.
Two-beam dark-field cross-sectional TEM images of an InN film grown at [(a) and (d)], of an film grown at [(b) and (e)], and of an film grown at [(c) and (f)] near the zone axis with g = 0002 [(a)–(c)] and [(d)–(f)]. The arrows in (c) indicate some of the inversion domain boundaries.
Atomically resolved lattice image taken in a thin sample area of the film grown at . Two domains with opposite polarities are clearly seen. The dashed rectangle indicates the region of an inversion domain boundary.
High-resolution TEM image of the interface between the film grown at and an O-polar ZnO substrate. The arrow indicates an inversion domain boundary. The triangles highlight the interface between and ZnO.
High-resolution TEM image of the interface between an film grown at and O-polar ZnO substrate. Misfit dislocations at the are indicated by arrows. A 60° a-type misfit dislocation is clearly seen in the magnified inset.
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