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[(a)–(d)] STM topographic images of the parallel Gd-doped SiNW array with a doping of 0.05 ML Gd on Si(110)-16 × 2 surface taken at different magnifications: (a) 500 × 500 nm2 (bias voltage Vb = +1.5 V, tunneling current It = 50 pA), (b) 250 × 250 nm2, (c) 125 × 125 nm2, and (d) 35 × 35 nm2 (Vb = −1.2 V, It = 10 pA).
(a) The STM topographic image (+1.2 V, 20 pA, 15 × 10 nm2) of a Gd-doped SiNW. (b) A set of five dI/dV curves acquired at different positions (A-E) along a Gd-doped SiNW, as indicated in (a). (c) A set of five dI/dV curves acquired at different positions (F-J) within the adjacent substrate. All dI/dV curves in (b) and (c) were acquired at Vb = 1.5 V, It = 20 pA. (d) Six dI/dV curves on the site K taken at different tip-sample distances set by It = 50–100 pA at Vb = 1.0 V.
STM topographic images (−1.0 V, 10 pA, 33 × 20 nm2) and of two different parallel Gd-doped SiNW arrays obtained by depositing Gd of 0.1 ML (a) and 0.01 ML (c), respectively. [(b), (d)] Different dI/dV curves of the individual Gd-doped SiNWs in (a) and (c), taken at various tip–sample distances set by various It of 50–100 pA at Vb = 1.0 V.
(a) The dI/dV map (250 × 50 pixel2) taken at Vb = −1.380 V and (b) the corresponding topographic STM image (21 × 4 nm2) of the parallel Gd-doped SiNW array shown in Fig. 1(d). (c) Intensity profiles of the dI/dV map along the dashed line in (a). (d) Cross-sectional profiles across the parallel Gd-doped SiNWs along the dashed line in (b).
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