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RHEED images of (a), UHV annealed MgO substrate (b), 15 nm NiO(001) grown on MgO (001) (c), after growth of 10 nm Fe3O4(001) on NiO/MgO. The images were recorded in (100) azimuth. (d) Schematic of the Hall bar used for the transversal MR measurements (see Ref. 6).
Transversal MR vs magnetic field at 300 K, measured at different angles for 10 nm Fe3O4 (a) and Fe3O4/NiO bilayer (b). For comparison with the transversal MR measured at θ = 00, magnetization vs field measurements along  direction for both systems are also shown in (c) and (d).
Bias dependence of the longitudinal (V xx ) and transversal voltage (V xy ) for both systems under a 1 T magnetic field. (a)-(c) 10 nm Fe3O4/MgO, (e)-(g) 10 nm Fe3O4/NiO/MgO. The bias dependence of the transversal MR for a magnetic field of 1 Tesla for Fe3O4/MgO (d) and 10 nm Fe3O4/NiO/MgO (h).
Magnetic field dependence of the longitudinal and transversal MR measured at three current regions for (a)-(d) Fe3O4 film grown on MgO and (d)-(h) Fe3O4 film grown on NiO/MgO.
Longitudinal and transversal MR as a function of θ under 1 T field measured at 200 K for (a) and (b) Fe3O4 film grown on MgO and (c) and (d) Fe3O4 film grown on NiO/MgO. The bias current is 0.002 mA for both systems.
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