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Electrically pumped lasing from p-ZnO/n-GaN heterojunction diodes
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10.1063/1.4740081
/content/aip/journal/apl/101/5/10.1063/1.4740081
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/5/10.1063/1.4740081
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The hole concentration profile of the ZnO:P film measured by ECV; the insets show the I-V and C-V curves.

Image of FIG. 2.
FIG. 2.

The PL spectra of the p-ZnO and n-GaN films measured at room temperature; the inset shows the low temperature (10 K) PL spectrum of the p-ZnO film.

Image of FIG. 3.
FIG. 3.

The I-V curve of the p-ZnO/n-GaN heterojunction diode; the insets show the contact characteristics of the electrodes, and a schematic diagram of the diode.

Image of FIG. 4.
FIG. 4.

(a) EL spectra of the p-ZnO/n-GaN diode under different injection currents; the inset shows the diode EL intensity dependence on the injection current. (b) The amplifying EL spectra of the p-ZnO/n-GaN structure at 7 and 9 mA.

Image of FIG. 5.
FIG. 5.

Energy band diagrams of the p-ZnO/n-GaN diode under (a) thermal equilibrium and (b) forward bias.

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/content/aip/journal/apl/101/5/10.1063/1.4740081
2012-08-01
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrically pumped lasing from p-ZnO/n-GaN heterojunction diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/5/10.1063/1.4740081
10.1063/1.4740081
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