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The hole concentration profile of the ZnO:P film measured by ECV; the insets show the I-V and C-V curves.
The PL spectra of the p-ZnO and n-GaN films measured at room temperature; the inset shows the low temperature (10 K) PL spectrum of the p-ZnO film.
The I-V curve of the p-ZnO/n-GaN heterojunction diode; the insets show the contact characteristics of the electrodes, and a schematic diagram of the diode.
(a) EL spectra of the p-ZnO/n-GaN diode under different injection currents; the inset shows the diode EL intensity dependence on the injection current. (b) The amplifying EL spectra of the p-ZnO/n-GaN structure at 7 and 9 mA.
Energy band diagrams of the p-ZnO/n-GaN diode under (a) thermal equilibrium and (b) forward bias.
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