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Bulk and interfacial deep levels observed in In0.53Ga0.47As/GaAs0.5Sb0.5 multiple quantum well photodiode
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10.1063/1.4740275
/content/aip/journal/apl/101/5/10.1063/1.4740275
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/5/10.1063/1.4740275

Figures

Image of FIG. 1.
FIG. 1.

Heterostructure details for the lattice-matched MQW detector.

Image of FIG. 2.
FIG. 2.

Dark IV curve for MQW photodiode measured at −0.5 V at different temperatures. Device area is 9.62 × 10−4 cm2.

Image of FIG. 3.
FIG. 3.

Dark current density versus inverse of temperature at a bias of −0.5 V. The activation energy extracted from the slope of the Arrhenius plot is 0.29 eV, suggesting the presence of near-mid-gap traps.

Image of FIG. 4.
FIG. 4.

Measurement and Lorentzian fit to the measured of QW photodiode for (a) Ea, (b) Eb, and (c) Ec for several temperatures. Curves have been vertically offset for clarity.

Image of FIG. 5.
FIG. 5.

Arrhenius plot for the three traps detected by LFNS in a typical MQW photodiode.

Image of FIG. 6.
FIG. 6.

Measured RTS noise of MQW photodiodes measured at (a) + (b) 133 K and (c) + (d) 194 K for Ea and Eb, respectively. The bias dependence of low- and high-current states probability indicates trap Ea is donor-like and Eb is acceptor-like.

Image of FIG. 7.
FIG. 7.

Band alignment and wave functions for the type II quantum wells in this study.

Tables

Generic image for table
Table I.

Measured parameters for test samples and the MQW photodiode.

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/content/aip/journal/apl/101/5/10.1063/1.4740275
2012-07-31
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Bulk and interfacial deep levels observed in In0.53Ga0.47As/GaAs0.5Sb0.5 multiple quantum well photodiode
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/5/10.1063/1.4740275
10.1063/1.4740275
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