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Heterostructure details for the lattice-matched MQW detector.
Dark IV curve for MQW photodiode measured at −0.5 V at different temperatures. Device area is 9.62 × 10−4 cm2.
Dark current density versus inverse of temperature at a bias of −0.5 V. The activation energy extracted from the slope of the Arrhenius plot is 0.29 eV, suggesting the presence of near-mid-gap traps.
Measurement and Lorentzian fit to the measured of QW photodiode for (a) Ea, (b) Eb, and (c) Ec for several temperatures. Curves have been vertically offset for clarity.
Arrhenius plot for the three traps detected by LFNS in a typical MQW photodiode.
Measured RTS noise of MQW photodiodes measured at (a) + (b) 133 K and (c) + (d) 194 K for Ea and Eb, respectively. The bias dependence of low- and high-current states probability indicates trap Ea is donor-like and Eb is acceptor-like.
Band alignment and wave functions for the type II quantum wells in this study.
Measured parameters for test samples and the MQW photodiode.
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