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Control of an interfacial MoSe2 layer in Cu2ZnSnSe4 thin film solar cells: 8.9% power conversion efficiency with a TiN diffusion barrier
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10.1063/1.4740276
/content/aip/journal/apl/101/5/10.1063/1.4740276
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/5/10.1063/1.4740276

Figures

Image of FIG. 1.
FIG. 1.

Cross-sectional SEM images of CZTSe solar cells. After CZTSe deposition, the samples were annealed at (a) 570 °C (A4), (b) 540 °C (A3), (c) 510 °C (A2), and (d) 480 °C (A1) under Se atmosphere whose partial pressure was larger than equilibrium Se vapor pressure at each annealing temperature.

Image of FIG. 2.
FIG. 2.

(a)–(c) Room temperature PL spectra of CZTSe samples: (a) samples A1–A4; (b) samples B1–B3; (c) sample TiN2. EQE of A4 and B1 are shown in the inset of (a). (d) TR-PL spectra of some representative samples.

Image of FIG. 3.
FIG. 3.

(a) Dark-field cross-sectional TEM image focusing on the bottom interface of CZTSe solar cell of 8.9% efficiency—sample C1(TiN). (b) Elemental profiles determined by EDX line scans. The scan direction is indicated by the arrow in (a).

Image of FIG. 4.
FIG. 4.

J-V curves of 8.9% efficiency CZTSe solar cell with a TiN layer [sample C1 (TiN)] under dark (blue) and 1 sun illumination (red). Normalized EQE is shown in the inset.

Tables

Generic image for table
Table I.

List of CZTSe samples with their annealing conditions, photovoltaic parameters, and MoSe2 interfacial thickness. In sample set A, post-deposition annealing temperature is varied while Se partial pressure during the annealing is kept similar. In sample set B, Se partial pressure is varied at a fixed annealing temperature, 540 °C. In sample set TiN, ∼20 nm thick TiN diffusion barrier is inserted between CZTSe and Mo back contact.

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/content/aip/journal/apl/101/5/10.1063/1.4740276
2012-07-31
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Control of an interfacial MoSe2 layer in Cu2ZnSnSe4 thin film solar cells: 8.9% power conversion efficiency with a TiN diffusion barrier
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/5/10.1063/1.4740276
10.1063/1.4740276
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