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Phase change behaviors of Zn-doped Ge2Sb2Te5 films
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10.1063/1.4742144
/content/aip/journal/apl/101/5/10.1063/1.4742144
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/5/10.1063/1.4742144
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Figures

Image of FIG. 1.
FIG. 1.

XRD patterns of GST and Zn-doped GST films (a) as-deposited, (b) 200 °C, (c) 250 °C, and (d) 350 °C, respectively.

Image of FIG. 2.
FIG. 2.

(a) Sheet resistance as a function of temperature for undoped and Zn-doped GST films. (b) The Arrhenius extrapolation at 10-year of data retention for undoped and Zn-doped GST films.

Image of FIG. 3.
FIG. 3.

(a) Carrier density and Hall mobility of Zn15.16(GST)84.84 film as a function of temperature. (b) Plots of (αhv)1/2 vs hv for Zn15.16(GST)84.84 films; up-left inset figure is Vis-IR transmission spectra corresponding.

Image of FIG. 4.
FIG. 4.

(a) Raman spectra of GST and Zn15.16(GST)84.84 films annealed at 250 °C and 350 °C. XPS spectra for 350 °C-annealed GST and Zn15.16(GST)84.84 films: (b) Zn 2p, (c) Sb (3d), and Te (3d).

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/content/aip/journal/apl/101/5/10.1063/1.4742144
2012-08-01
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Phase change behaviors of Zn-doped Ge2Sb2Te5 films
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/5/10.1063/1.4742144
10.1063/1.4742144
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