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The variation of devices temperature under different operating current as a function of duration time. (a) P-GaN/ZnO LED at 100 mA; (b) P-GaN/ZnO LED at 40 mA; (c) GIS diode at 100 mA; and (d) GIS diode at 40 mA.
The representative XRD patterns of the ZnO based GIS structure after rapid thermal annealing treatments.
I-V characteristic of the ZnO-based GIS diode illustrating an excellent rectifying diode-like behavior. The left top inset shows the schematic diagram of the ZnO-based GIS diode. The right bottom inset shows the I-V characteristics of ITO contact to ZnO film.
The typical C-V characteristics of the ZnO-based GIS diodes measured under various frequency: (a)1 KHz; (b)100 KHZ; (c)1 MHZ; and (d) 10 MHz.
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