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ZnO-based graphite-insulator-semiconductor diode for transferable and low thermal resistance high-power devices
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10.1063/1.4742150
/content/aip/journal/apl/101/5/10.1063/1.4742150
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/5/10.1063/1.4742150
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Figures

Image of FIG. 1.
FIG. 1.

The variation of devices temperature under different operating current as a function of duration time. (a) P-GaN/ZnO LED at 100 mA; (b) P-GaN/ZnO LED at 40 mA; (c) GIS diode at 100 mA; and (d) GIS diode at 40 mA.

Image of FIG. 2.
FIG. 2.

The representative XRD patterns of the ZnO based GIS structure after rapid thermal annealing treatments.

Image of FIG. 3.
FIG. 3.

I-V characteristic of the ZnO-based GIS diode illustrating an excellent rectifying diode-like behavior. The left top inset shows the schematic diagram of the ZnO-based GIS diode. The right bottom inset shows the I-V characteristics of ITO contact to ZnO film.

Image of FIG. 4.
FIG. 4.

The typical C-V characteristics of the ZnO-based GIS diodes measured under various frequency: (a)1 KHz; (b)100 KHZ; (c)1 MHZ; and (d) 10 MHz.

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/content/aip/journal/apl/101/5/10.1063/1.4742150
2012-07-31
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: ZnO-based graphite-insulator-semiconductor diode for transferable and low thermal resistance high-power devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/5/10.1063/1.4742150
10.1063/1.4742150
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