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Identifying a suitable passivation route for Ge interfaces
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10.1063/1.4742166
/content/aip/journal/apl/101/5/10.1063/1.4742166
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/5/10.1063/1.4742166

Figures

Image of FIG. 1.
FIG. 1.

(a), (b) Sub-stiochiometric defect at Ge:GeO2 interface and its associated local density of states. (c), (d) Structure and PDOS of a reconstructed oxygen divacancy at a Ge:HfO2 interface, becoming Ge–Hf bonds.

Image of FIG. 2.
FIG. 2.

Epitaxial interface models of (a) Ge:La2Ge2O7, (b) Ge:La2GeO5, (c) Ge:HfGeO4, (d) (111)Ge:(001)Ge3N4, and (e) Ge:Al2O3. Blue balls = Hf and purple balls = La. Hf atom in (a) replaces one La atom in order to satisfy an electron counting rule. (d) Deep blue ball = N, (e) pink balls = Al.

Image of FIG. 3.
FIG. 3.

PDOS at (a) Ge:La2Ge2O7, (b) Ge:La2GeO5, (c) Ge:HfGeO4, (d) Ge:Ge3N4 and Ge:Al2O3 interfaces.

Image of FIG. 4.
FIG. 4.

Calculated phase diagrams of GeO2-HfO2 and GeO2-La2O3 based on their silicate equivalents.28

Tables

Generic image for table
Table I.

Summary of sX and GGA band gaps of La2Ge2O7, La2GeO5, HfGeO4, pyroclore La2Ge2O7, Ge3N4, and Al2O3.

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/content/aip/journal/apl/101/5/10.1063/1.4742166
2012-08-03
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Identifying a suitable passivation route for Ge interfaces
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/5/10.1063/1.4742166
10.1063/1.4742166
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