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Normalized zirconium content within ∼300 nm thick PZT films prepared on platinized silicon substrates with differing platinum adhesion layers. Films prepared on Pt/ZnO substrates possess virtually no gradient in zirconium concentration while films prepared on Pt/Ti and Pt/TiO x substrates possess decreased zirconium concentrations near the Pt interface and enrichments near the film surface.
ac field dependence of the real part of the relative permittivity as a function of frequency for PZT films prepared on (a) Pt/Ti/SiO2/Si, (b) Pt/TiO x /SiO2/Si, (c) Pt/ZnO/SiO2/Si, and (d) a comparison of the three samples measured at 1 kHz.
Magnitude (top) and phase (bottom) of the harmonics calculated from a Fourier analysis of the measured polarization response at approximately 7 Hz. Dashed lines indicate ±π/2 phase.
Measured Rayleigh parameters for ∼300 nm thick nominally morphotropic phase boundary composition PZT thin films on platinized silicon wafers with differing adhesion layers.
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