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(a) Low temperature (10 K) and (b) room temperature (300 K) PL spectra of hBN and AlN epilayers grown on sapphire substrate by MOCVD.
Low temperature (10 K) band-edge PL spectra of an hBN epilayer with emission polarization parallel ( ) and perpendicular ( ) to the c-axis. Excitation laser line is polarized in the direction perpendicular to the c-axis ( ).
Low temperature (10 K) band-edge PL spectrum of an hBN epilayer in the energy range of 4.9–6.0 eV. The six fitted Gaussian peaks are plotted in solid lines.
(a) PL decay characteristics of the 5.478 eV emission line in an hBN epilayer measured at 10 K. (b) Temperature dependent decay lifetime (τ and τeff) of the 5.478 eV emission line in an hBN epilayer measured from 10 K to 300 K. Open diamond represents a data point measured from bulk hBN (Ref. 2 ). (c) The Arrhenius plot of the decay lifetime (τ and τeff) and the data fitted using Eq. (2) . The fitted values of activation energy (Ea) from τ and τeff are also indicated in the figure.
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