1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Formation energy of optically active Er3+ centers in Er doped GaN
Rent:
Rent this article for
USD
10.1063/1.4742196
/content/aip/journal/apl/101/5/10.1063/1.4742196
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/5/10.1063/1.4742196
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) SIMS profile of a GaN:Er epilayer grown at 1040 °C and an In0.05Ga0.95 N:Er epilayer grown at 760 °C by MOCVD. (b) Comparison of the XRD rocking curves of the (002) peak for the epilayers. (c) PL spectra measured at 300 K of In0.05Ga0.95 N:Er and GaN:Er epilayers. The excitation wavelength was λexc = 263 nm.

Image of FIG. 2.
FIG. 2.

(a) PL spectra at 300 K of GaN:Er grown at different growth temperatures, TG = 890, 940, 1020, 1040, and 1060 °C. The excitation wavelength was λexc = 263 nm. (b) Plot of full width at half maxima (FWHM) of the XRD (002) rocking curve of GaN:Er as a function of the growth temperature, TG.

Image of FIG. 3.
FIG. 3.

An Arrhenius plot of the variation of the integrated 1.54 μm PL emission intensity with the growth temperature, TG. The linear line is the least squares fit of the data points according to Eq. (1). The value of EF determined from the least squares fit is 1.8 ± 0.2 eV.

Loading

Article metrics loading...

/content/aip/journal/apl/101/5/10.1063/1.4742196
2012-08-02
2014-04-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Formation energy of optically active Er3+ centers in Er doped GaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/5/10.1063/1.4742196
10.1063/1.4742196
SEARCH_EXPAND_ITEM