Full text loading...
Typical bipolar resistance switching I-V curves of the AZTO RRAM with Ti/AZTO/Pt device structure, measured at room temperature. The inset showing the resistive memory devices with titanium (Ti)/AZTO/platinum (Pt) structure.
(a) Switching cycling test under a current compliance of 3 mA. (b) Retention characteristics for the HRS and LRS at room temperature, as measured at 0.2 V under a durable stress of 200 mV.
XRD patterns of the AZTO thin film. The inset represents the XPS spectra of the O 1 s core levels in the AZTO film.
The conducting mechanism with double logarithmic plot, showing the space-charge-limited-current conduction dominant in HRS by curve fitting. The inset shows the conduction mechanism of LRS is an ohmic-like behavior.
Article metrics loading...