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Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications
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10.1063/1.4742737
/content/aip/journal/apl/101/5/10.1063/1.4742737
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/5/10.1063/1.4742737
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Typical bipolar resistance switching I-V curves of the AZTO RRAM with Ti/AZTO/Pt device structure, measured at room temperature. The inset showing the resistive memory devices with titanium (Ti)/AZTO/platinum (Pt) structure.

Image of FIG. 2.
FIG. 2.

(a) Switching cycling test under a current compliance of 3 mA. (b) Retention characteristics for the HRS and LRS at room temperature, as measured at 0.2 V under a durable stress of 200 mV.

Image of FIG. 3.
FIG. 3.

XRD patterns of the AZTO thin film. The inset represents the XPS spectra of the O 1 s core levels in the AZTO film.

Image of FIG. 4.
FIG. 4.

The conducting mechanism with double logarithmic plot, showing the space-charge-limited-current conduction dominant in HRS by curve fitting. The inset shows the conduction mechanism of LRS is an ohmic-like behavior.

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/content/aip/journal/apl/101/5/10.1063/1.4742737
2012-07-31
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/5/10.1063/1.4742737
10.1063/1.4742737
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