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Study of polarity effect in SiOx-based resistive switching memory
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10.1063/1.4742894
/content/aip/journal/apl/101/5/10.1063/1.4742894
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/5/10.1063/1.4742894
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Figures

Image of FIG. 1.
FIG. 1.

30 cycles of resistive switching behavior in samples with PDA. Left and right insets show a schematic representation of the TaN/SiO2/n++ Si-substrate structure, and an I–V plot of electroforming data, respectively. Arrows indicate voltage sweep directions.

Image of FIG. 2.
FIG. 2.

Polarity dependence (−/− means negative set/negative reset) of LRS and HRS distributions across 30 cycles for samples (a) w/and (b) w/o 5 min 500 °C PDA in O2.

Image of FIG. 3.
FIG. 3.

(a) Polarity dependence of reset voltage, reset current, and reset power (inset) for samples w/and w/o PDA. (b) Polycrystalline-silicon top electrode device switching characteristics and O− ion reaction with Si in polycrystalline-silicon electrode to form SiOx (inset).

Image of FIG. 4.
FIG. 4.

Retention test at room temperature for samples w/PDA in positive and negative polarity conditions.

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/content/aip/journal/apl/101/5/10.1063/1.4742894
2012-08-03
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Study of polarity effect in SiOx-based resistive switching memory
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/5/10.1063/1.4742894
10.1063/1.4742894
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