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30 cycles of resistive switching behavior in samples with PDA. Left and right insets show a schematic representation of the TaN/SiO2/n++ Si-substrate structure, and an I–V plot of electroforming data, respectively. Arrows indicate voltage sweep directions.
Polarity dependence (−/− means negative set/negative reset) of LRS and HRS distributions across 30 cycles for samples (a) w/and (b) w/o 5 min 500 °C PDA in O2.
(a) Polarity dependence of reset voltage, reset current, and reset power (inset) for samples w/and w/o PDA. (b) Polycrystalline-silicon top electrode device switching characteristics and O− ion reaction with Si in polycrystalline-silicon electrode to form SiOx (inset).
Retention test at room temperature for samples w/PDA in positive and negative polarity conditions.
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