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Engineering the metal gate electrode for controlling the threshold voltage of organic transistors
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/content/aip/journal/apl/101/6/10.1063/1.4739511
2012-08-07
2014-07-22

Abstract

For practical applications of organic field-effect transistors (OFETs), the control of threshold voltage ( ) is important as different circuits require different electrical characteristics. Here, we demonstrate two types of gate electrode structures to achieve this control, namely, via dual-metal gates and bilayer metal gates. The first approach uses different metallic materials, titanium, and platinum, while the second approach uses different thicknesses in a metal bilayer composed of aluminum and platinum. Our results show that the is varied by more than 20% of the supply voltage without affecting the field-effect mobility values for both pentacene p-channel and C n-channel OFETs.

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Scitation: Engineering the metal gate electrode for controlling the threshold voltage of organic transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/6/10.1063/1.4739511
10.1063/1.4739511
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