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The CuInSe2–CuIn3Se5 defect compound interface: Electronic structure and band alignment
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Photoemission intensities of Cu2p3/2, In3d5/2, and Se3d core levels in the couse of CuIn3Se5 deposition relative to their starting values for the CuInSe2 substrate. A significant reduction of the copper emission is observed while the indium and selenium signals slightly increase. (b) HeI valence band spectra for the substrate and the individual preparation steps. A gradual transition from stoichiometric CuInSe2 to the typical defect compound valence band shape is observed.

Image of FIG. 2.
FIG. 2.

(a) Intensitiy map of the band structure in normal emission for the CuInSe2(112) surface (high/low intensity: yellow/black). For enhanced contrast, the negative second derivative in energy is shown. Maxima for the top valence band (black dots) and intersections for selected excitation energies (black lines) are also depicted. (b) Same for the defect compound CuIn3Se5 at the end of the band alignment experiment. The spectra were shifted by the band bending value determined from the Se3d core level shift.

Image of FIG. 3.
FIG. 3.

(a) Method for extracting the valence band maximum by linear extrapolation of the leading edge. The synchrotron spectrum for CuInSe2 at hν = 21 eV agresses nicely with the HeI data. Suitable choice of the excitation energy allows for a measurement of the valence band at the Γ point. (b)Same for the defect compound CuIn3Se5. (c) Sketch of the resulting band diagram at the CuInSe2-ODC interface.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: The CuInSe2–CuIn3Se5 defect compound interface: Electronic structure and band alignment