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Monitoring structural influences on quantum transport in InAs nanowires
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View: Figures


Image of FIG. 1.
FIG. 1.

Scanning electron micrograph of wire A with a schematics of the configuration used in the transport measurements. Scale bar is . The color scale of the secondary electron yield is inverted for clarity. A TEM image of the marked middle section is displayed in Fig. 3.

Image of FIG. 2.
FIG. 2.

(a) Universal conductance fluctuation pattern of wire A in units of as a function of magnetic field and temperature. The curve on the left side shows the conductance fluctuations at 0.35 K. (b) UCF amplitude vs T of the investigated suspended wires. The dashed lines indicate themaximum constant amplitude when the entire wire is phase-coherent. The solid lines represent the fitted temperature dependences above 3 K. The dash-dotted line is the UCF amplitude calculated from the phase-coherence length using Eq. (2). (c) vs T determined from the correlation field . The solid lines are the fitted exponential temperature dependences. The dashed horizontal lines indicate the contact separation length.

Image of FIG. 3.
FIG. 3.

Low-magnification TEM image of the middle section of wire A. Scale bar is 100 nm. The image is stitched from 18 individual micrographs. The dashed lines mark the extremities of contacts 2 and 3 as indicated in Fig. 1.

Image of FIG. 4.
FIG. 4.

(a) Example high-resolution TEM image of wire A along with a schematics of the conduction band profile of the wurtzite (WZ) and zinc blende (ZB) crystal phases with twinning planes (T). marks the Fermi energy. (b) Distribution of the axial wurtzite segment lengths of the investigated nanowires.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Monitoring structural influences on quantum transport in InAs nanowires