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NG on mica. AFM images of the nanographene on mica after growth for (a) 2 h, (b) 2.5 h, and (c) 3 h. (d) Typical Raman spectra of the NG samples shown in (a)–(c).
Devices fabrication and measurements setup. (a) The fabrication process of NG-based strain sensor devices. (b) Optical images of the as-patterned devices with the zoom-in image of an individual device shown on the right. The arrow marks the bending direction. (c) Sketch map of the experimental setup for applying strain to devices; the inset shows an optical image of a real sample. (d) Illustration of a mica substrate under bending.
Piezoelectricity of the NG-based strain sensor devices. (a) I-V curve of a device with original sheet resistance of ∼5.5 M under different strains. (b) Resistance modulation of this device showing a GF ∼37. Both experimental data and line fit are shown. (c) Multi-cycle operation of the device. (d) The relationship of resistance changes and applied strains. The points and line show the experimental data and fitting, respectively.
Tunable gauge factors for NG-based strain sensor devices. (a) Strain induced resistance change for devices with different NG sheet resistances, where the points and lines show the experimental and linear fit data, respectively. (b) GFs versus sheet resistances.
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