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Scanning gate microscopy on a graphene nanoribbon
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Conductance as a function of backgate voltage. The transport gap can be seen between 14 V and 19 V. The measurement was taken at 1.7 K with a source-drain bias of . Inset: scanning force micrograph at ambient conditions of the nanoribbon under investigation. (L = 750 nm, W = 110 nm). (b) Finite bias measurement in a small range inside the transport gap.

Image of FIG. 2.
FIG. 2.

(a) SGM image of the nanoribbon. The lithographic outline is shown via the white dashed lines. Two centers of enhanced conductance can be seen as bright spots. The rich pattern far away from the graphene structure is attributed to the effect of trapped charges inside the substrate. (b) Averaged conductance over the vertical lines in (a). An increased intensity along the nanoribbon is clearly visible.

Image of FIG. 3.
FIG. 3.

Linescan parallel to the nanoribbon. After each line is finished, the voltage applied to the backgate is changed. (a) Raw data. Inset: proposed model for interpretation. Transport is dominated by two small quantum dots with large spacing of quantized energy levels. (b)Light blue pixels describe positions of local minima in y-direction as evaluated numerically. The series of Lorentzian curves (solid blue lines as guide for the eye manually overlaid using the local minima. Dots mark their centers.) represent at least two QDs forming inside the structure. The shifting of the centers of the curves indicates that the QDs shift in real space as a function of backgate voltage.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Scanning gate microscopy on a graphene nanoribbon