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Partially sandwiched graphene as transparent conductive layer for InGaN-based vertical light emitting diodes
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10.1063/1.4742892
/content/aip/journal/apl/101/6/10.1063/1.4742892
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/6/10.1063/1.4742892
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of the G-VLED fabrication process.

Image of FIG. 2.
FIG. 2.

(a) Light output intensity versus current curve for G-VLEDs and R-VLEDs. (b) Emission graph of G-VLEDs at different injection current. (c) Current-voltage characteristics of G-VLEDs and R-VLEDs before annealing; (d) Reverse current-voltage curves of G-VLEDs and R-VLEDs before annealing.

Image of FIG. 3.
FIG. 3.

(a) Forward voltage of annealed G-VLEDs and R-VLEDs. (b) The external quantum efficiency of annealed G-VLEDs and R-VLEDs. (c) Schematic diagrams of G-VLEDs before and after annealing, inter-diffusion process of N-electrode metal and GaN across graphene.

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/content/aip/journal/apl/101/6/10.1063/1.4742892
2012-08-06
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Partially sandwiched graphene as transparent conductive layer for InGaN-based vertical light emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/6/10.1063/1.4742892
10.1063/1.4742892
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