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XRD pattern (a) and cross-sectional SEM image (b) of BFMO thin films. The inset of (a) shows the schematic diagram of experiment.
The nonpolar RS characteristics in Pt/BFMO/Pt devices. The typical current-voltage behaviors of BRS (a) and URS (c) with absolute values plotted in semi-log scale. (b) and (d) show the resistance evolution of HRS and LRS with the reading voltage of 0.1 V in BRS and URS, respectively. The inset of (a) shows the forming process before BRS.
The current-voltage curves replotted on a log-log scale. (a) BRS in the positive bias range, with the inset showing the negative bias range. (b) URS.
XPS spectra of (a) Fe 2p and (b) Mn 2p in BFMO thin films. The inset of (a) shows the fitting of Fe 2p3/2 peak.
The sketches of nonpolar RS mechanism in Pt/BFMO/Pt memory devices. (a) and (b) Forming process, (c) BRS, (d) URS.
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