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Nonpolar resistive switching in Mn-doped BiFeO3 thin films by chemical solution deposition
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10.1063/1.4742897
/content/aip/journal/apl/101/6/10.1063/1.4742897
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/6/10.1063/1.4742897
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD pattern (a) and cross-sectional SEM image (b) of BFMO thin films. The inset of (a) shows the schematic diagram of experiment.

Image of FIG. 2.
FIG. 2.

The nonpolar RS characteristics in Pt/BFMO/Pt devices. The typical current-voltage behaviors of BRS (a) and URS (c) with absolute values plotted in semi-log scale. (b) and (d) show the resistance evolution of HRS and LRS with the reading voltage of 0.1 V in BRS and URS, respectively. The inset of (a) shows the forming process before BRS.

Image of FIG. 3.
FIG. 3.

The current-voltage curves replotted on a log-log scale. (a) BRS in the positive bias range, with the inset showing the negative bias range. (b) URS.

Image of FIG. 4.
FIG. 4.

XPS spectra of (a) Fe 2p and (b) Mn 2p in BFMO thin films. The inset of (a) shows the fitting of Fe 2p3/2 peak.

Image of FIG. 5.
FIG. 5.

The sketches of nonpolar RS mechanism in Pt/BFMO/Pt memory devices. (a) and (b) Forming process, (c) BRS, (d) URS.

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/content/aip/journal/apl/101/6/10.1063/1.4742897
2012-08-06
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nonpolar resistive switching in Mn-doped BiFeO3 thin films by chemical solution deposition
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/6/10.1063/1.4742897
10.1063/1.4742897
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