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Reduced thermal conductivity of isotopically modulated silicon multilayer structures
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View: Figures


Image of FIG. 1.
FIG. 1.

Concentration depth profiles of and of the Si isotope multilayer structure with 20 bilayers of grown by means of MBE on a Si substrate. The concentration profiles were recorded with TOF-SIMS.

Image of FIG. 2.
FIG. 2.

Time-resolved lattice expansion of a Au/Cr (#1: , #2: ) and a Au (#3: +, #4: ) layer measured by means of x-ray diffraction after heating the metal layer with a ps laser pulse. The lower two profiles represent the cooling behavior of Si samples with a Au(28 nm)/Cr(2 nm) layer deposited on Si without (#1) and with (#2) the Si isotope multilayer structure. The upper two profiles show the cooling behavior of a Au(30 nm) layer deposited directly on Si without (#3) and with (#4) the Si isotope multilayer. The solid lines represent best numerical fits to the experimental results (symbols). Note that the left axis displays the relative lattice expansion and the right axis the corresponding temperature .

Image of FIG. 3.
FIG. 3.

Sketch of the one-dimensional heat transport problem. The time evolution of the temperature of the metal layer is simulated by solving Eqs. (2)–(4) numerically assuming a homogeneous temperature of the metal layer at t = 0 directly after the laser pulse. A thermal boundary conductance at the metal/Si interface is taken into account by means of Eqs. (5)–(8). are the heat diffusivities of the Au film (F), the isotope multilayer (M), and the Si substrate (S).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reduced thermal conductivity of isotopically modulated silicon multilayer structures