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XRD pattern of ZnFe2O4 film on Pt (111)/Ti/SiO2/Si substrate annealed at 700 °C in air ambient. The inset shows the schematic configuration of the as-fabricated Ag/ZnFe2O4/Pt devices.
(a) Typical BRS characteristic of the Ag/ZnFe2O4/Pt memory device, schematic diagrams of (b) LRS, and (c) HRS for the filamentary conduction in BRS. The inset of Fig. 2(a) shows the I-V curve during the electroforming process.
(a) Dependence of reset current on set compliance current in BRS, (b) switching cycles in BRS of the Ag/ZnFe2O4/Pt memory device.
(a) Typical URS characteristic of the Ag/ZnFe2O4/Pt device in semi-log scale, (b) I-V curves re-plotted in double-log scale, (c) URS characteristic of the Ag/ZnFe2O4/Pt memory device transited from BRS mode. Schematic diagrams of (d) LRS, (e) MRS, and (f) HRS, for the filamentary conduction in URS.
(a) Switching cycles in URS mode with different erase voltage pulses of the Ag/ZnFe2O4/Pt memory device, (b) cumulative probability of low, medial, and high resistances in URS mode in the Ag/ZnFe2O4/Pt device with a negative voltage sweeping.
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