1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Bipolar and tri-state unipolar resistive switching behaviors in Ag/ZnFe2O4/Pt memory devices
Rent:
Rent this article for
USD
10.1063/1.4744950
/content/aip/journal/apl/101/6/10.1063/1.4744950
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/6/10.1063/1.4744950
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD pattern of ZnFe2O4 film on Pt (111)/Ti/SiO2/Si substrate annealed at 700 °C in air ambient. The inset shows the schematic configuration of the as-fabricated Ag/ZnFe2O4/Pt devices.

Image of FIG. 2.
FIG. 2.

(a) Typical BRS characteristic of the Ag/ZnFe2O4/Pt memory device, schematic diagrams of (b) LRS, and (c) HRS for the filamentary conduction in BRS. The inset of Fig. 2(a) shows the I-V curve during the electroforming process.

Image of FIG. 3.
FIG. 3.

(a) Dependence of reset current on set compliance current in BRS, (b) switching cycles in BRS of the Ag/ZnFe2O4/Pt memory device.

Image of FIG. 4.
FIG. 4.

(a) Typical URS characteristic of the Ag/ZnFe2O4/Pt device in semi-log scale, (b) I-V curves re-plotted in double-log scale, (c) URS characteristic of the Ag/ZnFe2O4/Pt memory device transited from BRS mode. Schematic diagrams of (d) LRS, (e) MRS, and (f) HRS, for the filamentary conduction in URS.

Image of FIG. 5.
FIG. 5.

(a) Switching cycles in URS mode with different erase voltage pulses of the Ag/ZnFe2O4/Pt memory device, (b) cumulative probability of low, medial, and high resistances in URS mode in the Ag/ZnFe2O4/Pt device with a negative voltage sweeping.

Loading

Article metrics loading...

/content/aip/journal/apl/101/6/10.1063/1.4744950
2012-08-08
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Bipolar and tri-state unipolar resistive switching behaviors in Ag/ZnFe2O4/Pt memory devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/6/10.1063/1.4744950
10.1063/1.4744950
SEARCH_EXPAND_ITEM