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Tunnel effect causing nonlinear current in few-layer graphene
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Schematic of the FLG device. (b) A SEM image of the substrate. (c) An optical image of few-layer graphene (FLG) over SiO2 and contacting gold electrodes (The scale bar is 10 μm). (d) Raman signal from several points on the sample of graphene. Each numbered scan is data taken at each of the matching numbered circles.

Image of FIG. 2.
FIG. 2.

(a) I-V characteristic of the device in Fig. 1(c) probed in air. (Inset) An equivalent circuit diagram for the FLG device. The parallel circuit consists of a fixed resistor and a resistor with changeable value. (b) Conductance versus voltage of the FLG shown in Fig. 1(c). A Guass fit of the data is shown as a solid line.

Image of FIG. 3.
FIG. 3.

(a)∼(c) The R-V curves of the samples. Guass fits of the data are shown as solid lines. (Inset) The corresponding optical images of the devices (The scale bar is 10 μm). (d) The corresponding dR/dV-V curves of the three devices, respectively. (e) The AFM image (tapping mode) of the FLG device in (a). (f) The thickness of the FLG shown in (e). (g) The max(dR/dV)-t characteristic of the FLG devices.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tunnel effect causing nonlinear current in few-layer graphene