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Mobility and screening effect in heavily doped accumulation-mode metal-oxide-semiconductor field-effect transistors
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10.1063/1.4745604
/content/aip/journal/apl/101/7/10.1063/1.4745604
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/7/10.1063/1.4745604
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Figures

Image of FIG. 1.
FIG. 1.

Measured surface mobility vs. accumulation charge for different values of surface doping concentration, ND. The inset shows textbook bulk mobility values for the three highest doping concentrations.

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/content/aip/journal/apl/101/7/10.1063/1.4745604
2012-08-14
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mobility and screening effect in heavily doped accumulation-mode metal-oxide-semiconductor field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/7/10.1063/1.4745604
10.1063/1.4745604
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