Full text loading...
(a) Perspective cutaway view of the 0.1 THz interaction circuit for backward-wave oscillation. (b) SEM image of the interaction circuit along section in Fig. 1(a) showing the deep etched profile of beam tunnel and cavities, and (c) Ti/Au-deposited interaction circuits on the etched silicon wafer.
Simulated and measured return loss characteristics of the interaction circuit.
SEM image of the interaction circuit showing non-flat bottom surface along section in Fig. 1(a) at the narrow channel between cavities.
Comparison of return loss characteristics between measurement and simulation assuming a rectangular box with height, in the narrow channel.
Article metrics loading...