1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Magnetically active vacancy related defects in irradiated GaN layers
Rent:
Rent this article for
USD
10.1063/1.4745776
/content/aip/journal/apl/101/7/10.1063/1.4745776
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/7/10.1063/1.4745776
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The temperature dependence of magnetization measured at B = 20 mT for two He-irradiated GaN samples. The inset shows data obtained in a representative sample prior to subtraction of the sapphire substrate effects.

Image of FIG. 2.
FIG. 2.

Magnetic hysteresis loop measured at T = 5 K for two irradiated GaN samples.

Image of FIG. 3.
FIG. 3.

Isothermal magnetization curves measured for the two selected He-irradiated GaN layers at T = 5 K.

Loading

Article metrics loading...

/content/aip/journal/apl/101/7/10.1063/1.4745776
2012-08-13
2014-04-18
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Magnetically active vacancy related defects in irradiated GaN layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/7/10.1063/1.4745776
10.1063/1.4745776
SEARCH_EXPAND_ITEM