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Non-volatile voltage control of magnetization and magnetic domain walls in magnetostrictive epitaxial thin films
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10.1063/1.4745789
/content/aip/journal/apl/101/7/10.1063/1.4745789
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/7/10.1063/1.4745789
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) X-ray diffraction 2θ-ω scans of the Fe81Ga19 film on a GaAs substrate showing the sharp reflection from the GaAs substrate and the Fe81Ga19 layer peak. 2θ is the angle between the incident beam and the diffracted beam. ω is the sample rotation around the axis orthogonal to the diffraction plane. (b) Magnetic hysteresis loops of the unprocessed Fe81Ga19 sample measured at 300 K by SQUID magnetometry. (c) A schematic diagram of the Hall bar device. The crystal directions of the GaAs and FeGa film are shown. The piezoelectric transducer is polycrystalline.

Image of FIG. 2.
FIG. 2.

The change in the transverse resistivity, Δρxy = ρxy – ρoffset (see supplemental material for the determination of ρoffset (Ref. 18)) measured as a function of the magnetic field applied in the plane of the device along the [100]/[010] directions with (a) tensile and (b) compressive strain applied. (c) Magnetic hysteresis loop extracted from the data in (a) using the AMR formula for transverse resistivity and field applied along [100]. (d) A schematic diagram showing the switching of the magnetic easy axis at fields HC1 and HC2.

Image of FIG. 3.
FIG. 3.

(a) The change in the transverse resistivity, Δρxy = ρxy – ρoffset (see supplemental material for the determination of ρoffset (Ref. 18)) measured as a function of the applied strain after first saturating in a field of 0.2 T and high negative strain. The different symbols represent successive sweeps of the strain, showing the reproducibility of the magnetization switching. The initial loop is not shown. The values for the magnetization pointing along the [100] and [010] directions are indicated by the dashed lines. (b) Δρxy as a function of VP.

Image of FIG. 4.
FIG. 4.

(a) MOKE images showing the section of the Hall bar used for the measurements of ρxy for different applied strain (ε). The contrast represents the component of the magnetization pointing across the bar. The arrows beneath each image indicate the direction of the magnetization in the region between the voltage probes. (b) The evolution of the magnetic configuration by domain wall motion as a function of the induced strain. The sequence represents the transition between panels (ii) and (iii) in (a).

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/content/aip/journal/apl/101/7/10.1063/1.4745789
2012-08-13
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Non-volatile voltage control of magnetization and magnetic domain walls in magnetostrictive epitaxial thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/7/10.1063/1.4745789
10.1063/1.4745789
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