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In-situ photoluminescence monitoring of GaN in plasma exposure
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10.1063/1.4745917
/content/aip/journal/apl/101/7/10.1063/1.4745917
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/7/10.1063/1.4745917
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) N-type GaN film PL spectra at different exposure time in the plasma discharge power of 200 W. (b) Exposure time dependence of sample temperature.

Image of FIG. 2.
FIG. 2.

GaN film PL spectra at different conditions. L1, L2, L3, and L4 represent the GaN film at RT before exposure, 82 °C in exposure, 189 °C in exposure, and RT after exposure, separately.

Image of FIG. 3.
FIG. 3.

(a) NBE peak intensity and corresponding wavelength; (b) YL and BL intensities as a function of exposure time. Error bar represents standard deviation of data.

Image of FIG. 4.
FIG. 4.

YL/NBE and BL/NBE intensity ratios as a function of exposure time.

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/content/aip/journal/apl/101/7/10.1063/1.4745917
2012-08-13
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In-situ photoluminescence monitoring of GaN in plasma exposure
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/7/10.1063/1.4745917
10.1063/1.4745917
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