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(a) N-type GaN film PL spectra at different exposure time in the plasma discharge power of 200 W. (b) Exposure time dependence of sample temperature.
GaN film PL spectra at different conditions. L1, L2, L3, and L4 represent the GaN film at RT before exposure, 82 °C in exposure, 189 °C in exposure, and RT after exposure, separately.
(a) NBE peak intensity and corresponding wavelength; (b) YL and BL intensities as a function of exposure time. Error bar represents standard deviation of data.
YL/NBE and BL/NBE intensity ratios as a function of exposure time.
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