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Subbandgap current collection through the implementation of a doping superlattice solar cell
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10.1063/1.4745921
/content/aip/journal/apl/101/7/10.1063/1.4745921
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/7/10.1063/1.4745921

Figures

Image of FIG. 1.
FIG. 1.

(a) Depiction of nipi cross-section with band diagram shown on the right, and (b) SEM micrograph of a cross section with epitaxially regrown contacts.

Image of FIG. 2.
FIG. 2.

Depiction of process flow for the DSL device, process described in detail within the text.

Image of FIG. 3.
FIG. 3.

(a) Dark and (b) one sun J-V curves for both the fabricated device and simulation.

Image of FIG. 4.
FIG. 4.

Measured external quantum efficiency in blue, and photoluminescence shown in red with the dashed lines depicting the fitted Gaussian peaks.

Image of FIG. 5.
FIG. 5.

Band diagram depicting the two mechanisms of absorption, with collection through the confined states shown as mechanism 1, and via the Franz-Keldysh effect as mechanism 2.

Tables

Generic image for table
Table I.

Summary of dark and light current metrics, series and shunt resistance, dark saturation current, ideality, short circuit current, open circuit voltage, and efficiency.

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/content/aip/journal/apl/101/7/10.1063/1.4745921
2012-08-13
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Subbandgap current collection through the implementation of a doping superlattice solar cell
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/7/10.1063/1.4745921
10.1063/1.4745921
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