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(a) Depiction of nipi cross-section with band diagram shown on the right, and (b) SEM micrograph of a cross section with epitaxially regrown contacts.
Depiction of process flow for the DSL device, process described in detail within the text.
(a) Dark and (b) one sun J-V curves for both the fabricated device and simulation.
Measured external quantum efficiency in blue, and photoluminescence shown in red with the dashed lines depicting the fitted Gaussian peaks.
Band diagram depicting the two mechanisms of absorption, with collection through the confined states shown as mechanism 1, and via the Franz-Keldysh effect as mechanism 2.
Summary of dark and light current metrics, series and shunt resistance, dark saturation current, ideality, short circuit current, open circuit voltage, and efficiency.
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