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(a) Scheme of the Si:Bi FinFET nanotransistor. (b) Trapping Coulomb potential of the Bi dopant a single energy level participating in the transport.
Scheme of the current-induced allowed transition for the (a) q = 1 charged system and (b) q = 0 uncharged system. It has been assumed that .
(a) and (b) Contour plot of the vs. applied bias V and on-site energy at zero magnetic field and B = 0.6 T, respectively. (c) and (d) Conduction spectrum as a function of applied bias for different magnetic fields at and respectively. White horizontal lines in panel (a) and (b) marks the values of in the 2D plots (c) and (d). In all cases, T = 10 mK and .
(a) Average electronic occupation of the Bi, (black line) and nuclear and electronic spins, (red line) and (blue line), respectively. (b) vs. bias for different temperatures. Same parameters as Fig. 3(c) with B = 0.6 T.
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