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Probing a single nuclear spin in a silicon single electron transistor
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10.1063/1.4746260
/content/aip/journal/apl/101/7/10.1063/1.4746260
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/7/10.1063/1.4746260
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Scheme of the Si:Bi FinFET nanotransistor. (b) Trapping Coulomb potential of the Bi dopant a single energy level participating in the transport.

Image of FIG. 2.
FIG. 2.

Scheme of the current-induced allowed transition for the (a) q = 1 charged system and (b) q = 0 uncharged system. It has been assumed that .

Image of FIG. 3.
FIG. 3.

(a) and (b) Contour plot of the vs. applied bias V and on-site energy at zero magnetic field and B = 0.6 T, respectively. (c) and (d) Conduction spectrum as a function of applied bias for different magnetic fields at and respectively. White horizontal lines in panel (a) and (b) marks the values of in the 2D plots (c) and (d). In all cases, T = 10 mK and .

Image of FIG. 4.
FIG. 4.

(a) Average electronic occupation of the Bi, (black line) and nuclear and electronic spins, (red line) and (blue line), respectively. (b) vs. bias for different temperatures. Same parameters as Fig. 3(c) with B = 0.6 T.

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/content/aip/journal/apl/101/7/10.1063/1.4746260
2012-08-16
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Probing a single nuclear spin in a silicon single electron transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/7/10.1063/1.4746260
10.1063/1.4746260
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