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XPS compositional depth profiles of (a) SiO2/GST/TiW annealed at 500 °C for 30 min and (b) SiO2/GST/TiWOx/TiW annealed at 600 °C for 30 min. The formation of the oxide layer was clearly presented and inter-diffusion between GST and TiW was suppressed due to the chemical robust oxide layer.
(a) I–V curves of PCM devices. The inset shows schematic cross-section of PCM device. Plots of RESET R-I curves of devices operated with pulses of (b) 20 ns and (c) 40 ns. Current reduction was achieved for the devices with TiWOx compared with the reference device.
Endurance characterization results of devices of (a) without oxide and (b) with TiWOx. Significant cyclability enhancement was achieved for the devices with oxide barrier layer.
The minimum RESET voltage against RESET pulse width during cycling for devices of (a) without oxide and (b) with TiWOx. Different performance degradation processes are presented for the device with and without TiWOx.
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