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XRD patterns for (a) polycrystalline but predominantly (001) and (101) orientation film on an alkaline-free glass, (b) (100) epilayer on a (0001) UID-GaN, (c) (001) epilayer mixed with (100) on a (0001) UID-GaN, and (d) (001) epilayer mixed with (100) on a (0001) p-GaN:Mg. Notations A, R, and UID mean anatase, rutile, and unintentionally doped, respectively.
VB XPS spectra for (a) predominantly (001)/(101) orientation polycrystalline film on alkaline-free glass, (b) UID-GaN, (c) on GaN, and (d) on GaN. (e) Schematic band alignment for , GaN, and . The band discontinuities and are relative to those of GaN. The effective of ranges between 3.00 and 3.20 eV.
Band profiles for heterojunctions between (a) virtual strain-free polycrystalline (001)/(101) and (0001) UID-GaN, (b) (100) and (0001) UID-GaN, (c) (001) A+(100) and (0001) UID-GaN, and (d) (001) A+(100) and (0001) p-GaN:Mg obtained using a 1D SCSP calculation. Fermi level is shown by dashed line in each panel. In case of (c), electrons are accumulated in the interfacial region of UID-GaN. The band diagram in (a) is merely nominal.
(a) Resistivity , sheet electron concentration , and electron Hall mobility at 300 K for the samples shown schematically on the bottom. (b) Arrhenius plots of and (c) relation between and temperature T for the samples shown in (a).
Material parameters for , and GaN used for a 1D SCSP calculation.
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