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Lateral transport properties of Nb-doped rutile- and anatase-TiO2 films epitaxially grown on c-plane GaN
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Image of FIG. 1.
FIG. 1.

XRD patterns for (a) polycrystalline but predominantly (001) and (101) orientation film on an alkaline-free glass, (b) (100) epilayer on a (0001) UID-GaN, (c) (001) epilayer mixed with (100) on a (0001) UID-GaN, and (d) (001) epilayer mixed with (100) on a (0001) p-GaN:Mg. Notations A, R, and UID mean anatase, rutile, and unintentionally doped, respectively.

Image of FIG. 2.
FIG. 2.

VB XPS spectra for (a) predominantly (001)/(101) orientation polycrystalline film on alkaline-free glass, (b) UID-GaN, (c) on GaN, and (d) on GaN. (e) Schematic band alignment for , GaN, and . The band discontinuities and are relative to those of GaN. The effective of ranges between 3.00 and 3.20 eV.

Image of FIG. 3.
FIG. 3.

Band profiles for heterojunctions between (a) virtual strain-free polycrystalline (001)/(101) and (0001) UID-GaN, (b) (100) and (0001) UID-GaN, (c) (001) A+(100) and (0001) UID-GaN, and (d) (001) A+(100) and (0001) p-GaN:Mg obtained using a 1D SCSP calculation. Fermi level is shown by dashed line in each panel. In case of (c), electrons are accumulated in the interfacial region of UID-GaN. The band diagram in (a) is merely nominal.

Image of FIG. 4.
FIG. 4.

(a) Resistivity , sheet electron concentration , and electron Hall mobility at 300 K for the samples shown schematically on the bottom. (b) Arrhenius plots of and (c) relation between and temperature T for the samples shown in (a).


Generic image for table
Table I.

Material parameters for , and GaN used for a 1D SCSP calculation.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Lateral transport properties of Nb-doped rutile- and anatase-TiO2 films epitaxially grown on c-plane GaN