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Optimization of Ta thickness for perpendicular magnetic tunnel junction applications in the MgO-FeCoB-Ta system
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10.1063/1.4746426
/content/aip/journal/apl/101/7/10.1063/1.4746426
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/7/10.1063/1.4746426
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Example M-H loops for MgO(10 nm)/FeCoB(tFeCoB)/Ta(5 nm)/Si thin films annealed at 250 °C.

Image of FIG. 2.
FIG. 2.

KefftFeCoB vs. tFeCoB for varying annealing temperature of MgO(10 nm)/FeCoB(tFeCoB)/Ta(5 nm)/Si. Inset: Perpendicular coercivity (Hc) vs tFeCoB.

Image of FIG. 3.
FIG. 3.

KefftFeCoB vs. tFeCoB for Fe60Co20B20 and Co60Fe20B20 films with the “top” or “bottom” sequence annealed at 250 °C. Inset: Perpendicular coercivity (Hc) vs tFeCoB.

Image of FIG. 4.
FIG. 4.

Dependence of saturation field, Hk, and coupling strength, σ, on Ta thickness. The shaded region corresponds to Ta thicknesses that provide both strong magnetic anisotropy and interlayer coupling.

Image of FIG. 5.
FIG. 5.

Perpendicular M-H loops for case B films showing anti-ferromagnetic coupling through the Ta interlayer of varying thickness.

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/content/aip/journal/apl/101/7/10.1063/1.4746426
2012-08-17
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Optimization of Ta thickness for perpendicular magnetic tunnel junction applications in the MgO-FeCoB-Ta system
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/7/10.1063/1.4746426
10.1063/1.4746426
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