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(a) nTP process: A stamp is covered with a hydrophobic alkylsilane SAM and a stack of two metals is then deposited thereon. The surfaces of the stamp and of the target substrate (glass) are activated by oxygen-plasma treatments and then brought into physical contact, causing the metal stack to be transferred from the raised regions of the stamp onto the target substrate. (b) Scanning electron microscopy (SEM) image of a crossbar array fabricated in a two-step nTP process. The width of the bottom lines is 100 nm, which of the top lines is 50 nm.
Measured (black squares) and simulated (red lines) ellipsometric spectra of ultra-thin (∼2.0 nm) plasma-grown titanium oxide films at three different angles of incidence (65°, 70°, and 75°). By fitting the measurement data to the Cauchy model, the oxide thickness was calculated.
(a) Measured (blue circles) and simulated (blue lines) current-voltage characteristics of a shadow-mask-patterned microscale Ti-TiOx-Au and Al-AlOx-Au (black squares) tunneling diode. (b) Measured current-voltage-characteristics of an ensemble of transfer-printed nanoscale Au-TiOx-Ti tunneling diodes.
Permittivity of titanium oxide reported in the literature and determined in this work.
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