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Characteristics of [6]phenacene thin film field-effect transistor
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1.
1. H. Okamoto, N. Kawasaki, Y. Kaji, Y. Kubozono, A. Fujiwara, and M. Yamaji, J. Am. Chem. Soc. 130, 10470 (2008).
http://dx.doi.org/10.1021/ja803291a
2.
2. N. Kawasaki, Y. Kubozono, H. Okamoto, A. Fujiwara, and M. Yamaji, Appl. Phys. Lett. 94, 043310 (2009).
http://dx.doi.org/10.1063/1.3076124
3.
3. Y. Kaji, R. Mitsuhashi, X. Lee, H. Okamoto, T. Kambe, N. Ikeda, A. Fujiwara, M. Yamaji, K. Omote, and Y. Kubozono, Org. Electron. 10, 432 (2009).
http://dx.doi.org/10.1016/j.orgel.2009.01.006
4.
4. Y. Kaji, N. Kawasaki, X. Lee, H. Okamoto, Y. Sugawara, S. Oikawa, A. Ito, H. Okazaki, T. Yokoya, A. Fujiwara, and Y. Kubozono, Appl. Phys. Lett. 95, 183302 (2009).
http://dx.doi.org/10.1063/1.3257373
5.
5. X. Lee, Y. Sugawara, A. Ito, S. Oikawa, N. Kawasaki, Y. Kaji, R. Mitsuhashi, H. Okamoto, A. Fujiwara, K. Omote, T. Kambe, N. Ikeda, and Y. Kubozono, Org. Electron. 11, 1394 (2010).
http://dx.doi.org/10.1016/j.orgel.2010.06.003
6.
6. N. Kawasaki, W. L. Kalb, T. Mathis, Y. Kaji, R. Mitsuhashi, H. Okamoto, Y. Sugawara, A. Fujiwara, Y. Kubozono, and B. Batlogg, Appl. Phys. Lett. 96, 113305 (2010).
http://dx.doi.org/10.1063/1.3360223
7.
7. Y. Kaji, K. Ogawa, R. Eguchi, H. Goto, Y. Sugawara, T. Kambe, K. Akaike, S. Gohda, A. Fujiwara, and Y. Kubozono, Org. Electron. 12, 2076 (2011).
http://dx.doi.org/10.1016/j.orgel.2011.08.016
8.
8. Y.-Y. Lin, D. J. Gundlach, S. F. Nelson, and T. N. Jackson, IEEE Electron Device Lett. 18, 606 (1997).
http://dx.doi.org/10.1109/55.644085
9.
9. T. W. Kelley, L. D. Boardman, T. D. Dunbar, D. V. Muyres, M. J. Pellerite, and T. P. Smith, J. Phys. Chem. B 107, 5877 (2003).
http://dx.doi.org/10.1021/jp034352e
10.
10. H. Klauk, M. Halik, U. Zschieschang, F. Eder, G. Schmid, and C. Dehm, Appl. Phys. Lett. 82, 4175 (2003).
http://dx.doi.org/10.1063/1.1579870
11.
11. E. Kuwahara, Y. Kubozono, T. Hosokawa, T. Nagano, K. Masunari, and A. Fujiwara, Appl. Phys. Lett. 85, 4765 (2004).
http://dx.doi.org/10.1063/1.1818336
12.
12. Y. Jang, D. Kim, Y. Park, J. Cho, M. Hwang, and K. Cho, Appl. Phys. Lett. 87, 152105 (2005).
http://dx.doi.org/10.1063/1.2093940
13.
13. Y. Kubozono, H. Mitamura, X. Lee, X. He, Y. Yamanari, Y. takahashi, Y. Suzuki, Y. Kaji, R. Eguchi, K. Akaike, T. Kambe, H. Okamoto, A. Fujiwara, T. Kato, T. Kosugi, and H. Aoki, Phys. Chem. Chem. Phys. 13, 16476 (2011).
http://dx.doi.org/10.1039/c1cp20961b
14.
14. Y. Sugawara, Y. Kaji, K. Ogawa, R. Eguchi, S. Oikawa, H. Gohda, A. Fujiwara, and Y. Kubozono, Appl. Phys. Lett. 98, 013303 (2011).
http://dx.doi.org/10.1063/1.3540648
15.
15. X. He, R. Eguchi, H. Goto, E. Vesugi, S. Hamao, T. Kambe, A. Fujiwara, and Y. Kubozono, “Fabrication of single crystal field-effect transistors with phenacene-type molecules and their excellent transistor characteristics” (unpublished).
16.
16. F. B. Mallory, K. E. Butler, A. C. Evans, and C. W. Mallory, Tetrahedron Lett. 37, 7173 (1996).
http://dx.doi.org/10.1016/0040-4039(96)01618-8
17.
17. H. Okamoto, M. Yamaji, S. Gohda, H. Sugino, and K. Sakate, Res. Chem. Intermed. (2012), doi: 10.1007/S1164-012-0639-1.
http://dx.doi.org/10.1007/S1164-012-0639-1
18.
18. D. V. Lang, X. Chi, T. Siegrist, A. M. Sergent, and A. P. Ramirez, Phys. Rev. Lett. 93, 076601 (2004).
http://dx.doi.org/10.1103/PhysRevLett.93.076601
19.
19. H. L. Gomes, P. Stallinga, M. Cölle, D. M. de Leeuw, and F. Biscarini, Appl. Phys. Lett. 88, 082101 (2006).
http://dx.doi.org/10.1063/1.2178410
20.
20. C. Goldmann, D. J. Gundlach, and B. Batlogg, Appl. Phys. Lett. 88, 063501 (2006).
http://dx.doi.org/10.1063/1.2171479
21.
21. C. Goldmann, C. Krellner, K. P. Pernstich, S. Haas, D. J. Gundlach, and B. Batlogg, J. Appl. Phys. 99, 034507 (2006).
http://dx.doi.org/10.1063/1.2170421
22.
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FIG. 1.

(a) Device structure of [6]phenacene thin film FET and molecular structure of [6]phenacene. (b) X-ray diffraction pattern of [6]phenacene thin films on Si substrate. The wavelength of x-ray beam is 1.5418 Å. Inset: X-ray diffraction pattern expanded for showing the whole shape of 001 reflection. (c) Schematic representation of molecular alignment of [6]phenacene in the thin films formed on SiO. (d) AFM image of [6]phenacene thin films on Si surface.

Image of FIG. 2.

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FIG. 2.

(a) Output and (b) transfer curves of [6]phenacene thin film FET with SiO gate dielectric. (c) Transfer curves of [6]phenacene thin film FET with TaO gate dielectric.

Image of FIG. 3.

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FIG. 3.

(a) | |max evolution of as a function of for [6]phenacene thin film FET with SiO gate dielectric. (b) Plots of | | measured at continuous application of  =   = −8 V as a function of . (c) Plots of | | measured at pulse application of and as a function of ; the applied bias is schematically shown in (b) and (c). The bias voltage is applied in time shown in blue and red line and the is detected in time shown in red line (0.17 s).

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/content/aip/journal/apl/101/8/10.1063/1.4747201
2012-08-20
2014-04-20

Abstract

Transistor characteristics are studied for field-effect transistors (FETs) with thin films of [6]phenacene, which has six benzene rings and W-shape structure. The molecular alignment preferable for FET transport is found to be formed in [6]phenacene thin films. The transistor shows clear p-channel FET characteristics with field-effect mobility as high as 3.7 cm2 V−1 s−1. The similar O sensing properties to picene FET are observed in [6]phenacene thin film FET. The bias stress properties are observed in [6]phenacene thin film FET. The pulse-voltage application suppresses the bias-stress effect and it enables a continuous O sensing in [6]phenacene FET.

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Scitation: Characteristics of [6]phenacene thin film field-effect transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/8/10.1063/1.4747201
10.1063/1.4747201
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