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Characteristics of [6]phenacene thin film field-effect transistor
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/content/aip/journal/apl/101/8/10.1063/1.4747201
2012-08-20
2014-09-22

Abstract

Transistor characteristics are studied for field-effect transistors (FETs) with thin films of [6]phenacene, which has six benzene rings and W-shape structure. The molecular alignment preferable for FET transport is found to be formed in [6]phenacene thin films. The transistor shows clear p-channel FET characteristics with field-effect mobility as high as 3.7 cm2 V−1 s−1. The similar O sensing properties to picene FET are observed in [6]phenacene thin film FET. The bias stress properties are observed in [6]phenacene thin film FET. The pulse-voltage application suppresses the bias-stress effect and it enables a continuous O sensing in [6]phenacene FET.

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Scitation: Characteristics of [6]phenacene thin film field-effect transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/8/10.1063/1.4747201
10.1063/1.4747201
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