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1.
1. H. Okamoto, N. Kawasaki, Y. Kaji, Y. Kubozono, A. Fujiwara, and M. Yamaji, J. Am. Chem. Soc. 130, 10470 (2008).
http://dx.doi.org/10.1021/ja803291a
2.
2. N. Kawasaki, Y. Kubozono, H. Okamoto, A. Fujiwara, and M. Yamaji, Appl. Phys. Lett. 94, 043310 (2009).
http://dx.doi.org/10.1063/1.3076124
3.
3. Y. Kaji, R. Mitsuhashi, X. Lee, H. Okamoto, T. Kambe, N. Ikeda, A. Fujiwara, M. Yamaji, K. Omote, and Y. Kubozono, Org. Electron. 10, 432 (2009).
http://dx.doi.org/10.1016/j.orgel.2009.01.006
4.
4. Y. Kaji, N. Kawasaki, X. Lee, H. Okamoto, Y. Sugawara, S. Oikawa, A. Ito, H. Okazaki, T. Yokoya, A. Fujiwara, and Y. Kubozono, Appl. Phys. Lett. 95, 183302 (2009).
http://dx.doi.org/10.1063/1.3257373
5.
5. X. Lee, Y. Sugawara, A. Ito, S. Oikawa, N. Kawasaki, Y. Kaji, R. Mitsuhashi, H. Okamoto, A. Fujiwara, K. Omote, T. Kambe, N. Ikeda, and Y. Kubozono, Org. Electron. 11, 1394 (2010).
http://dx.doi.org/10.1016/j.orgel.2010.06.003
6.
6. N. Kawasaki, W. L. Kalb, T. Mathis, Y. Kaji, R. Mitsuhashi, H. Okamoto, Y. Sugawara, A. Fujiwara, Y. Kubozono, and B. Batlogg, Appl. Phys. Lett. 96, 113305 (2010).
http://dx.doi.org/10.1063/1.3360223
7.
7. Y. Kaji, K. Ogawa, R. Eguchi, H. Goto, Y. Sugawara, T. Kambe, K. Akaike, S. Gohda, A. Fujiwara, and Y. Kubozono, Org. Electron. 12, 2076 (2011).
http://dx.doi.org/10.1016/j.orgel.2011.08.016
8.
8. Y.-Y. Lin, D. J. Gundlach, S. F. Nelson, and T. N. Jackson, IEEE Electron Device Lett. 18, 606 (1997).
http://dx.doi.org/10.1109/55.644085
9.
9. T. W. Kelley, L. D. Boardman, T. D. Dunbar, D. V. Muyres, M. J. Pellerite, and T. P. Smith, J. Phys. Chem. B 107, 5877 (2003).
http://dx.doi.org/10.1021/jp034352e
10.
10. H. Klauk, M. Halik, U. Zschieschang, F. Eder, G. Schmid, and C. Dehm, Appl. Phys. Lett. 82, 4175 (2003).
http://dx.doi.org/10.1063/1.1579870
11.
11. E. Kuwahara, Y. Kubozono, T. Hosokawa, T. Nagano, K. Masunari, and A. Fujiwara, Appl. Phys. Lett. 85, 4765 (2004).
http://dx.doi.org/10.1063/1.1818336
12.
12. Y. Jang, D. Kim, Y. Park, J. Cho, M. Hwang, and K. Cho, Appl. Phys. Lett. 87, 152105 (2005).
http://dx.doi.org/10.1063/1.2093940
13.
13. Y. Kubozono, H. Mitamura, X. Lee, X. He, Y. Yamanari, Y. takahashi, Y. Suzuki, Y. Kaji, R. Eguchi, K. Akaike, T. Kambe, H. Okamoto, A. Fujiwara, T. Kato, T. Kosugi, and H. Aoki, Phys. Chem. Chem. Phys. 13, 16476 (2011).
http://dx.doi.org/10.1039/c1cp20961b
14.
14. Y. Sugawara, Y. Kaji, K. Ogawa, R. Eguchi, S. Oikawa, H. Gohda, A. Fujiwara, and Y. Kubozono, Appl. Phys. Lett. 98, 013303 (2011).
http://dx.doi.org/10.1063/1.3540648
15.
15. X. He, R. Eguchi, H. Goto, E. Vesugi, S. Hamao, T. Kambe, A. Fujiwara, and Y. Kubozono, “Fabrication of single crystal field-effect transistors with phenacene-type molecules and their excellent transistor characteristics” (unpublished).
16.
16. F. B. Mallory, K. E. Butler, A. C. Evans, and C. W. Mallory, Tetrahedron Lett. 37, 7173 (1996).
http://dx.doi.org/10.1016/0040-4039(96)01618-8
17.
17. H. Okamoto, M. Yamaji, S. Gohda, H. Sugino, and K. Sakate, Res. Chem. Intermed. (2012), doi: 10.1007/S1164-012-0639-1.
http://dx.doi.org/10.1007/S1164-012-0639-1
18.
18. D. V. Lang, X. Chi, T. Siegrist, A. M. Sergent, and A. P. Ramirez, Phys. Rev. Lett. 93, 076601 (2004).
http://dx.doi.org/10.1103/PhysRevLett.93.076601
19.
19. H. L. Gomes, P. Stallinga, M. Cölle, D. M. de Leeuw, and F. Biscarini, Appl. Phys. Lett. 88, 082101 (2006).
http://dx.doi.org/10.1063/1.2178410
20.
20. C. Goldmann, D. J. Gundlach, and B. Batlogg, Appl. Phys. Lett. 88, 063501 (2006).
http://dx.doi.org/10.1063/1.2171479
21.
21. C. Goldmann, C. Krellner, K. P. Pernstich, S. Haas, D. J. Gundlach, and B. Batlogg, J. Appl. Phys. 99, 034507 (2006).
http://dx.doi.org/10.1063/1.2170421
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2012-08-20
2015-05-06

Abstract

Transistor characteristics are studied for field-effect transistors (FETs) with thin films of [6]phenacene, which has six benzene rings and W-shape structure. The molecular alignment preferable for FET transport is found to be formed in [6]phenacene thin films. The transistor shows clear p-channel FET characteristics with field-effect mobility as high as 3.7 cm2 V−1 s−1. The similar O sensing properties to picene FET are observed in [6]phenacene thin film FET. The bias stress properties are observed in [6]phenacene thin film FET. The pulse-voltage application suppresses the bias-stress effect and it enables a continuous O sensing in [6]phenacene FET.

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Scitation: Characteristics of [6]phenacene thin film field-effect transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/8/10.1063/1.4747201
10.1063/1.4747201
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