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Histogram of the NW diameter. The solid line depicts a fit to the experimental diameter distribution with a distribution. Inset: Top-view scanning electron micrograph of the GaN NW ensemble.
Raman spectrum of a GaN layer (green) and a GaN NW ensemble (red), both grown on Si. The spectra are normalized to the intensity of the Si optical phonon which originates from the substrate. For wavenumbers larger than , the signal is enlarged by a factor of 15. The spectra shown are recorded using the 413.1-nm line of the ion laser, but essentially identical ones are obtained with the 482.5-nm line. The inset depicts the geometry of the setup.
Intensity distribution within a GaN NW obtained from the solution of the Maxwell equations for a periodic square array of hexagonal NWs standing on a Si substrate. The figures display a cross-section through one unit cell, and the incident light is assumed to have a wavelength of 482.5 nm. (a) Distribution of within a NW, i.e., of light with a wavevector having nonzero in-plane components. (b) Distribution of the total intensity within a NW.
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