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High responsivity near-infrared photodetectors in evaporated Ge-on-Si
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10.1063/1.4747213
/content/aip/journal/apl/101/8/10.1063/1.4747213
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/8/10.1063/1.4747213
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SIMS measurement of the P concentration versus depth. Inset: Ge, Si, and P counts versus depth; the vertical dashed line indicates the junction.

Image of FIG. 2.
FIG. 2.

XRD ω-scan of as-grown (dashed line) and annealed (solid line) samples (both undoped). The annealing took place at 580 °C for 10 min.

Image of FIG. 3.
FIG. 3.

Dark current density measured in doped (solid line) and undoped (dashed line) Ge-on-Si samples versus reverse bias. The device schematic cross-section is depicted in the inset.

Image of FIG. 4.
FIG. 4.

Responsivity at 1.55μm versus reverse bias: doped (solid line) and undoped (dashed line) samples.

Image of FIG. 5.
FIG. 5.

SNR in doped (solid line with circles and dashed line with triangles) and undoped (solid line with squares and dashed line with dots) for various incident optical powers and a bandwidth of 1 GHz.

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/content/aip/journal/apl/101/8/10.1063/1.4747213
2012-08-20
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High responsivity near-infrared photodetectors in evaporated Ge-on-Si
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/8/10.1063/1.4747213
10.1063/1.4747213
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