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SIMS measurement of the P concentration versus depth. Inset: Ge, Si, and P counts versus depth; the vertical dashed line indicates the junction.
XRD ω-scan of as-grown (dashed line) and annealed (solid line) samples (both undoped). The annealing took place at 580 °C for 10 min.
Dark current density measured in doped (solid line) and undoped (dashed line) Ge-on-Si samples versus reverse bias. The device schematic cross-section is depicted in the inset.
Responsivity at 1.55μm versus reverse bias: doped (solid line) and undoped (dashed line) samples.
SNR in doped (solid line with circles and dashed line with triangles) and undoped (solid line with squares and dashed line with dots) for various incident optical powers and a bandwidth of 1 GHz.
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