Full text loading...
SEM images showing the Si emitter surface reacted with Ag/Cu50Zr50 MG and Ag/Cu46Zr46 Al8 MG pastes. Brighter contrast region indicates the presence of Ag crystallites. Contact area fraction and contact resistance of electrodes are indicated in the figures.
Amounts of dissolved Ag in Cu50Zr50 and Cu46Zr46 Al8 MG ribbon after firing process. The Ag/Mg paste was coated on the MG ribbon and fired at 873 K for 30 min.
The cross-sectional SEM images showing the contact morphology between the Si emitter and the Ag electrode processed using (a) Ag/OG paste and (b) Ag/Cu46Zr46Al8 MG paste. STEM HAADF images showing Ag crystallites precipitated on the Si emitter surface when using (c) Ag/OG paste and (d) Ag/Cu46Zr46Al8 MG paste. Before STEM observation, sintered Ag in electrode was removed by etching in nitric acid to observe the Ag crystallites on the emitter surface.
Microstructural features of the contact area processed using Ag/Cu46Zr46Al8 MG paste. (a) STEM HAADF image showing the contact area between the Ag electrode and the Si emitter. (b) EDS line scan profile showing the presence of the MG buffer layer between the Ag electrode and the Si emitter. (c) HRTEM image showing the inverted triangular pyramidal shape of the Ag crystallite and Fourier transformed diffraction patterns obtained from Ag crystallite and Si emitter.
Thermal and electrical properties of MG ribbons and electrical properties of the electrodes fabricated using Ag/Cu50Zr50 and Cu46Zr46 Al8 MG paste (for comparison, data for OG are included).
Article metrics loading...