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A schematic diagram of a dark-mode SCM setup using a two-pass technique. In the second pass, the AFM laser is turned off to eliminate photoperturbations.
The SCM images of EJ regions at the MV of (a) 0.1 V, (b) 0.3 V, (c)0.5 V, (d) 0.7 V, and (e) 0.9 V. The white dotted lines and the green bands denote the SiO2/Si interface and depletion regions, respectively.
(a) The section analysis of the SCM images in Fig. 2. The regions I, II, III, and IV are defined by the SCM image of Fig. 2(a). (b) The width of the observed depletion region decreases with the MV and is down to zero at MVs of 0.7 V and 0.9 V.
For a conductive tip scanning at different positions of an EJ region, the modulation areas at a low MV and a high MV are schematically shown in (a) and (b), respectively. The tip positions L, C, and R schematically denote the depletion region boundary near the p-type region, the center of the depletion region, and the depletion region boundary near the n-type region, respectively. In (c), for a conductive tip working on a sample surface, the schematic section view shows three effective capacitance components in a modulated area.
From the section analysis of the SCM images of an EJ region, the figure shows how the measured EJ depth increases with the MV.
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