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1 × 1 μm AFM of p-type GaN:Mg film (RMS roughness = 1.27 nm).
(a)-(d) Temperature-dependent resistivity (top left, log plot inset), Hall carrier concentration (top right), Hall mobility (bottom left), and Hall coefficient (bottom right) for comparitive p-GaN films.
Trend of temperature-dependent resistivity for three samples with different room temperature hole concentrations.
SIMS depth profile for MME-grown GaN:Mg film with 52% Mg activation.
P-type GaN:Mg growth conditions.
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