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Nonmagnetic spin-field-effect transistor
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10.1063/1.4747494
/content/aip/journal/apl/101/8/10.1063/1.4747494
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/8/10.1063/1.4747494
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic of the proposed spin FET based on a quantum wire. The setup consists of the device region which includes two RSOC segments with different strengths and , the left and right leads (L and R), and two intermediate segments (M) which smooth the potential difference between the device region and the leads. (b) The potential imposed on the setup in (a) which provides only one open subband in the leads while two subbands in the device region. (c) Same as (a), but the potential is replaced by the width constriction of the leads.

Image of FIG. 2.
FIG. 2.

Conductance and spin polarization effect of the left half structure of the proposed spin FET. (a) is for the model shown in Fig. 1(a) and with a potential well shown in Fig. 1(b), width of lead L is , length of transition region is is a potential applied to lead R and (b) is for the model with width constriction in the left lead shown in Fig. 1(c), . Other parameters for the two models are width of device region is , where is the width of lead R .

Image of FIG. 3.
FIG. 3.

(a) and (b) The dispersion relation for unperturbed subbands (a) and perturbed subbands (b). (c) and (d) Schematic of the two working states of the spin FET, (c) and (d). The state has the conductance 1 and the other state has the conductance 0.

Image of FIG. 4.
FIG. 4.

Conductances of two types of proposed spin FET with various . (a) is for the model with a potential well shown in Figs. 1(a) and 1(b), and (b) is for the model with width constriction in the left and right leads shown in Fig. 1(c), . Other parameters for the two models are . Definition of parameters can be found in Fig. 1 and the caption of Fig. 2.

Image of FIG. 5.
FIG. 5.

Conductance obtained using the simple picture for (a) “1” state and (b) “0” state for the energy window and . Length of the device region is same as in Fig. 4(b). Solid line is obtained with multiple reflections and dashed line is obtained without multiple reflections.

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/content/aip/journal/apl/101/8/10.1063/1.4747494
2012-08-22
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nonmagnetic spin-field-effect transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/8/10.1063/1.4747494
10.1063/1.4747494
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