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(a) Calculated EPR transition frequencies of Bi donors (solid curves) and deep PRC (dashed line) with 9.076 GHz microwave excitation frequency (dotted-dashed line). The intersections of the PRC transition energy with bismuth donor transitions (open triangles) and with the 9.076 GHz microwave (open square) are also shown. (b) An SDR-MR spectrum of Bi donors in Si recorded at 16 K under illumination. The 9.076 GHz microwave is used both to induce Bi EPR transition and to probe the change in the sample photoconductivity. CR1 and CR2 are the cross relaxation signals between Bi and PRC. The open circles in (b) indicate simulated intensities using the SDR model described in the text with the parameter value of .
Cross relaxation lines CR1 (a) and CR2 (b) together with SDR-MR Bi lines detected at different microwave frequencies. The Bi EPR lines labeled as in (a) and in (b) shift with the resonant frequency whereas the lines CR1 and CR2 do not. Additionally, the CR1 line is narrower than CR2 because, as shown in Fig. 1(a), the difference in the field-derivative of the transition frequency between the paramagnetic recombination center and resonant Bi transition is larger.
(a) Low-field SDR-MR spectra with 50 and 200 MHz resonance frequencies together with simulation of the 200 MHz spectrum. The transitions by the radio frequencies and X-band 9.076 GHZ microwave are labeled as Bi-RF and Bi-X, respectively. The line intensities are simulated using the same model and parameters as for Fig. 1(b). (b) The Bi-RF line positions observed at various resonant frequencies (solid circles) together with calculated resonant fields (solid lines).
Low-field SDR-MR spectra probed by the 9.076 GHz X-band reflection (a) with a single 8.141 GHz excitation frequency and (b) with the same 8.141 GHz excitation plus an additional 100 MHz radio frequency. The lines resonant with the 8.141 GHz microwave and the 100 MHz radio frequency are labeled as Bi-8 GHz and Bi-RF, respectively.
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