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Inserting a p-InGaN layer before the p-AlGaN electron blocking layer suppresses efficiency droop in InGaN-based light-emitting diodes
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10.1063/1.4747802
/content/aip/journal/apl/101/8/10.1063/1.4747802
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/8/10.1063/1.4747802
/content/aip/journal/apl/101/8/10.1063/1.4747802
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/content/aip/journal/apl/101/8/10.1063/1.4747802
2012-08-24
2014-10-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Inserting a p-InGaN layer before the p-AlGaN electron blocking layer suppresses efficiency droop in InGaN-based light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/8/10.1063/1.4747802
10.1063/1.4747802
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