1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Inserting a p-InGaN layer before the p-AlGaN electron blocking layer suppresses efficiency droop in InGaN-based light-emitting diodes
Rent:
Rent this article for
USD
10.1063/1.4747802
/content/aip/journal/apl/101/8/10.1063/1.4747802
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/8/10.1063/1.4747802
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Calculated band diagrams for the GaN, InGaN, and p-InGaN LEDs at a forward current of 20 mA.

Image of FIG. 2.
FIG. 2.

EQEs and output powers of the GaN, InGaN, and p-InGaN LEDs plotted with respect to the forward current (up to 1 A).

Image of FIG. 3.
FIG. 3.

Forward I–V characteristics of the GaN, InGaN, and p-InGaN LEDs. Inset: Corresponding reverse I–V characteristics and forward log I–V characteristics in semi-logarithmic scale.

Image of FIG. 4.
FIG. 4.

SIMS depth profiles of the GaN and p-InGaN LEDs.

Loading

Article metrics loading...

/content/aip/journal/apl/101/8/10.1063/1.4747802
2012-08-24
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Inserting a p-InGaN layer before the p-AlGaN electron blocking layer suppresses efficiency droop in InGaN-based light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/8/10.1063/1.4747802
10.1063/1.4747802
SEARCH_EXPAND_ITEM