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Calculated band diagrams for the GaN, InGaN, and p-InGaN LEDs at a forward current of 20 mA.
EQEs and output powers of the GaN, InGaN, and p-InGaN LEDs plotted with respect to the forward current (up to 1 A).
Forward I–V characteristics of the GaN, InGaN, and p-InGaN LEDs. Inset: Corresponding reverse I–V characteristics and forward log I–V characteristics in semi-logarithmic scale.
SIMS depth profiles of the GaN and p-InGaN LEDs.
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