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Response delay caused by dielectric relaxation of polymer insulators for organic transistors and resolution method
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25.Generally, the bias stress effect causes shifts in threshold voltage without changing mobility. Thus, the bias stress effect can be estimated by the shift in threshold voltage after the application of gate voltage over a long time period. In the case of an OFET with SiO2, this threshold voltage shift was 2.6 V after the application of −20 V of VG for 1800 s. However, in the case of an OFET with PVT/SiO2, the shift was suppressed to 0.8 V.
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We investigated the effect of dielectric relaxation in polymer gate insulators on the device characteristics of organic field effect transistors. Dielectric relaxation of polymer gate insulators caused an increase in drain current (ID ) in a period starting immediately after the application of the gate voltage (VG ) and lasting several milliseconds. This induced an apparent delay in the response of ID . Based on the observed results, we suggested an ideal gate insulator to achieve organic field effect transistors that have a fast response and high performance.
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