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200-fs pulse generation from a GaInN semiconductor laser diode passively mode-locked in a dispersion-compensated external cavity
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10.1063/1.4747808
/content/aip/journal/apl/101/8/10.1063/1.4747808
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/8/10.1063/1.4747808
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Figures

Image of FIG. 1.
FIG. 1.

Schematic representation of dispersion-compensated external cavity mode-locked GaInN semiconductor laser diode. BS-LD: bisectional laser diode, BPF: bandpass filter. In the actual experiment, the output beam was folded after the BPF to pass through the BPF three times.

Image of FIG. 2.
FIG. 2.

(a) Pulse FWHM (left axis) and average power (right axis) dependence on intracavity GVD. Intensity autocorrelation trace (b) and optical spectrum (c) at GVD of −0.015 ps2. Intensity autocorrelation trace (d) and optical spectrum (e) at GVD of −0.058 ps2. All the measurements in Fig. 2 were performed without the BPF after the MLLD.

Image of FIG. 3.
FIG. 3.

(a) Intensity autocorrelation trace measured after the BPF at GVD of −0.058 ps2. Inset: corresponding spectrum. (b) Pulse duration (left axis) and spectral width (right axis) dependence on center transmission wavelength of the BPF.

Image of FIG. 4.
FIG. 4.

(a) Cross-correlation trace of MLLD output measured without BPF at GVD of −0.058 ps2. Inset: Schematic representation of cross-correlation experimental setup. BPF: bandpass filter, BBO: β-BaB2O4 crystal. (b) rf spectrum of MLLD output at GVD of −0.058 ps2 measured without BPF. Resolution bandwidth and video bandwidth were 1 kHz and 300 Hz, respectively. Inset: rf spectrum over wide frequency range.

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/content/aip/journal/apl/101/8/10.1063/1.4747808
2012-08-24
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: 200-fs pulse generation from a GaInN semiconductor laser diode passively mode-locked in a dispersion-compensated external cavity
http://aip.metastore.ingenta.com/content/aip/journal/apl/101/8/10.1063/1.4747808
10.1063/1.4747808
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